PART |
Description |
Maker |
STD22NM20N05 STD22NM20N STD22NM20NT4 |
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET N-CHANNEL 200V - 0.088ヘ - 22A DPAK ULTRA LOW GATE CHARGE MDmesh⑩ II MOSFET N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh?/a> II MOSFET
|
STMicroelectronics
|
STD95NH02L-1 STD95NH02L |
N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET Power MOSFET N-channel 24V - 0.0039ヘ - 80A - DPAK - IPAK Ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
STFI6N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
STF23N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
STD5N95K5 STF5N95K5 |
Ultra-low gate charge
|
STMicroelectronics
|
SPA07N60C3 SPI07N60C3 SPP07N60C3 SPP07N60C307 |
New revolutionary high voltage technology Ultra low gate charge
|
Infineon Technologies AG
|
SPB07N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPP07N60C309 SPA07N60C3 SPI07N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPP20N60C309 SPP20N60C3 SPI20N60C3 SPA20N60C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
SPI11N60CFD |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
STL8NH3LL |
N-CHANNEL 30V - 0.012 Ohm - 8A - PowerFLAT ULTRA LOW GATE CHARGE STRIPFET MOSFET
|
ST Microelectronics
|